DMP1022UFDE d atasheet number: ds35477 rev. 9 - 2 1 of 7 www.diodes.com july 2012 ? diodes incorporated DMP1022UFDE 12v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25c -12v 16m @ v gs = -4.5v -9.1a 21.5m ? @ v gs = -2.5v -7.9a 26m ? @ v gs = -1.8v -7.0a 32m ? @ v gs = -1.5v -6.3a description this mosfet has been designed specifically for use in battery management applications. features ? 0.6mm profile ? ideal for low profile applications ? pcb footprint of 4mm 2 ? low gate threshold voltage ? fast switching speed ? esd protected to 3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: u-dfn2020-6 type e ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0065 grams (approximate) ordering information (note 4) part number marking reel size (inches) quantity per reel DMP1022UFDE-7 p4 7 3,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view pin out esd protected internal schematic source gate protection diode gate drai n p4 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) p4 ym d d d d 1 2 6 5 ssg3 4 u-dfn2020-6 type e bottom view pin1
DMP1022UFDE d atasheet number: ds35477 rev. 9 - 2 2 of 7 www.diodes.com july 2012 ? diodes incorporated DMP1022UFDE maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -12 v gate-source voltage v gss 8 v continuous drain current (note 6) v gs = -4.5v steady state t a = +25c t a = +70c i d -9.1 -7.2 a t<5s t a = +25c t a = +70c i d -11.2 -9.0 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -90 a continuous source-drain diode current t a = +25c t c = +25c i s -2.5 -7.1 a pulsed source-drain diode current (10 s pulse, duty cycle = 1%) i sm -50 a thermal characteristics characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.66 w t a = +70c 0.42 thermal resistance, junction to ambient (note 5) steady state r ja 189 c/w t<5s 123 total power dissipation (note 6) t a = +25c p d 2.03 w t a = +70c 1.3 thermal resistance, junction to ambient (note 6) steady state r ja 61 c/w t<5s 40 thermal resistance, junction to case (note 6) steady state r jc 9.3 operating and storage temperature range t j, t stg -55 to +150 c notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal vias to bottom layer 1inch square copper plate 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v , drain-source voltage (v) fig. 1 soa, safe operation area ds -i , d r ain c u r r en t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0 10 20 30 40 50 60 70 80 90 100 t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 p , p eak t r ansien t p o iwe r (w) (pk) single pulse r = 61c/w r = r * r t - t = p * r ? ja ja(t) (t) ja ja ja(t)
DMP1022UFDE d atasheet number: ds35477 rev. 9 - 2 3 of 7 www.diodes.com july 2012 ? diodes incorporated DMP1022UFDE 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 r (t)=r(t) * r ? ja ja r =61c/w duty cycle, d=t1/ t2 ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -12 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25c i dss ? ? -1 a v ds = -12v, v gs = 0v gate-source leakage i gss ? ? 2 a v gs = 5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.35 ? -0.8 v v ds = v gs , i d = -250 a v gs(th) temperature coefficient v gs(th) /t j - 2.5 ? mv/c i d = -250 a on-state drain current i d ( on ) -10 ? ? a v gs = -4.5v, v ds < -5a static drain-source on-resistance r ds (on) ? 12 16 m v gs = -4.5v, i d = -8.2a 15 21.5 v gs = -2.5v, i d = -7.2a 20 26 v gs = -1.8v, i d = -6.6a 23 32 v gs = -1.5v, i d = -1a 46 95 v gs = -1.2v, i d = -1a forward transfer admittance |y fs | ? 12 - s v ds = -4v, i d = -8.2a diode forward voltage v sd ? -0.8 -1.2 v v gs = 0v, i s = -8a dynamic characteristics (note 8) input capacitance c iss ? 2953 ? pf v ds = -4v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 756 ? reverse transfer capacitance c rss ? 678 ? gate resistance r g ? 8.6 18 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g ? 28.4 42.6 nc v gs = -5v, v ds = -4, i d = -10a total gate charge q g ? 25.3 38 v gs = -4.5v, v ds = -4v, i d = -10a gate-source charge q g s ? 2.3 ? gate-drain charge q g d ? 7.2 ? turn-on delay time t d ( on ) ? 20 30 ns v ds = -4v, v gs = -4.5v, r g = 1 ? , r l = 0.4 ? , i d = -9.8a turn-on rise time t r ? 28 42 turn-off delay time t d ( off ) ? 117 176 turn-off fall time t f ? 93 139 body diode characteristics diode forward voltage v sd ? -0.8 -1.2 v v gs = 0v, i s = -9.8a continuous source-drain diode current (note 6) i s ? ? -2.5 a t a = +25c ? ? -7.1 t c = +25c pulse diode forward current (note 8) i sm ? ? -50 ? bodyy diode reverse recovery time (note 8) t r r ? 28 56 ns i s = -9.8a, di/dt = 100a/ s reverse recovery fall time t a ? 10 ? reverse recovery rise time t b ? 18 ? body diode reverse recovery charge (note 8) q r r ? 13 26 nc notes: 7. short duration pulse test used to minimize self-heating effect 8. guaranteed by design. not subject to production testing
DMP1022UFDE d atasheet number: ds35477 rev. 9 - 2 4 of 7 www.diodes.com july 2012 ? diodes incorporated DMP1022UFDE 0 5 10 15 20 25 30 -v , drain -source voltage(v) fig. 4 typical output characteristics ds 012 345 -i , d r ai n c u r r e n t (a) d v = -1.5v gs v = -1.2v gs v = -1.8v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -8.0v gs 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 -v , gate-source voltage (v) gs fig. 5 typical transfer characteristics -i , d r ain c u r r en t (a) d t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = -5.0v ds 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 -i , drain source current fig. 6 typical on-resistance vs. drain current and gate voltage d r ,d r ain-s o u r ce o n- r esistance( ) ds(on) 0 0.005 0.010 0.015 0.020 0.025 0.030 048121620 -i , drain source current (a) fig. 7 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) v = -4.5v gs t = -55c a t = 25c a t = 85c a t = 125 c a t = 150 c a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 8 on-resistance variation with temperature r , d r ai n -s o u r c e on-resistance (normalized) ds(on) 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 9 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = -4.5v i= a gs d -10 v=.5v i= a gs d -2 -5
DMP1022UFDE d atasheet number: ds35477 rev. 9 - 2 5 of 7 www.diodes.com july 2012 ? diodes incorporated DMP1022UFDE 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 10 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e(v) gs(th) 0 4 8 12 16 20 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 11 diode forward voltage vs. current sd -i , s o u r c e c u r r en t (a) s 0 500 1,000 1,500 2,000 2,500 3,000 3,500 4,000 0 3 6 9 12 15 -v , drain-source voltage (v) fig. 12 typical junction capacitance ds c , j u n c t i o n c a p a c i t an c e (p f ) t c oss c rss f = 1mhz c iss 100 1,000 10,000 100,000 0 2 4 6 8 10 12 -v , drain-source voltage(v) fig. 13 typical drain-source leakage current vs. voltage ds -i , leaka g e c u r r e n t (na) dss t = 150c a t = 125c a t = 85c a t = 25c a 0 2 4 6 8 0 5 10 15 20 25 30 35 40 45 50 q , total gate charge (nc) fig. 14 gate-charge characteristics g v, g a t e-s o u r c e v o l t a g e (v) gs
DMP1022UFDE d atasheet number: ds35477 rev. 9 - 2 6 of 7 www.diodes.com july 2012 ? diodes incorporated DMP1022UFDE package outline dimensions suggested pad layout u-dfn2020-6 type e dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 ? ? 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e ? ? 0.65 l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 ? ? 0.305 k2 ? ? 0.225 z ? ? 0.20 all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 a1 z(4x) b1 l1 k1 k2 d d2 e e b(6x) l(2x) e2 a a3 x1 y3 x (6x) c x2 y1 y2 y (2x)
DMP1022UFDE d atasheet number: ds35477 rev. 9 - 2 7 of 7 www.diodes.com july 2012 ? diodes incorporated DMP1022UFDE important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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